unisonic technologies co., ltd 10n80 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-218.f 10a, 800v n-channel power mosfet ? description the utc 10n80 uses utc?s advanced proprietary, planar stripe, dmos technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 1.1 ? @v gs = 10 v * ultra low gate charge ( typical 45nc ) * low reverse transfer capacitance ( c rss = typical 15pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 10n80l-t3p-t 10n80g-t3p-t to-3p g d s tube 10n80l-tf1-t 10n80g-tf1-t to-220f1 g d s tube 10N80L-TF2-T 10n80g-tf2-t to-220f2 g d s tube
10n80 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-218.f ? absolute maximum ratings (t c =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 800 v gate-source voltage v gss 30 v continuous drain current (t c = 25 ) i d 10 a pulsed drain current (note 2) i dm 40 a avalanche current (note 2) i ar 10 a avalanche energy single pulsed (note 3) e as 920 mj repetitive (note 2) e ar 24 mj peak diode recovery dv/dt (note 4) dv/dt 4.0 v/ns power dissipation to-3p p d 240 w to-220f1 36 to-220f2 37 linear derating factor above t c = 25 to-3p 1.92 /w to-220f1 0.288 to-220f2 0.296 junction temperature t j 150 storage temperature t stg -55 ~ +150 notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature. 3. l=17.3mh, i as =10a, v dd =50v, r g =25 ? , starting t j =25c 4. i sd 10 a, di/dt 200a/ s, v dd bv dss , starting t j =25c. ? thermal data parameter symbol ratings unit junction to ambient to-3p ja 40 /w to-220f1/ to-220f2 62.5 junction to case to-3p jc 0.52 /w to-220f1 3.47 to-220f2 3.37
10n80 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-218.f ? electrical characteristics (t j =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 800 v drain-source leakage current i dss v ds =800v, v gs =0 v 10 a v ds =640v, t c =125c 100 gate-body leakage current i gss v ds =0 v, v gs = 30 v 100 na breakdown voltage temperature coefficient bv dss / t j i d =250a, referenced to 25c 980 v/ on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.0 5.0 v static drain-source on-resistance r ds ( on ) v gs = 10v, i d = 5.0a 0.9 1.1 ? dynamic parameters input capacitance c iss v ds =25v, v gs =0v, f=1mhz 2150 2800 pf output capacitance c oss 180 230 pf reverse transfer capacitance c rss 15 20 pf switching parameters turn-on delay time t d ( on ) v dd =400v, i d =10.0a, r g =25 ? (note 1,2) 50 110 ns turn-on rise time t r 130 270 turn-off delay time t d ( off ) 90 190 turn-off fall-time t f 80 170 total gate charge q g v ds =640v, v gs =10v, i d =10.0a (note 1,2) 45 58 nc gate source charge q gs 13.5 gate drain charge q gd 17 source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =10.0 a,v gs =0v 1.4 v maximum continuous drain-source diode forward current i s 10.0 a maximum pulsed drain-source diode forward current i sm 40.0 reverse recovery time t r r v gs = 0v, di f /dt = 100 a/s, i s = 10.0a (note 1) 730 ns reverse recovery charge q rr 10.9 nc notes: 1. pulse test: pulse width 300s, duty cycle 2%. 2. independent of oper ating temperature.
10n80 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-218.f ? test circuit switching test circuit switching waveforms gate charge test circui t gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
10n80 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-218.f ? test circuit(cont.) same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period peak diode recovery dv/dt test circuit
10n80 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-218.f ? typical characteristics 200 0 0 2 drain current vs. source to drain voltage drain current,i d (a) source to drain voltage,v sd (mv) 800 400 600 6 8 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 1000 4 10 1 0 0 0.5 drain current vs. gate threshold voltage drain current,i d (ma) gate threshold voltage,v th (v) 2.5 1 1.5 2 3 drain current vs. drain-source breakdown voltage 0 0 50 drain current,i d (a) drain-source breakdown voltage,bv dss (v) 600 250 200 100 150 200 300 400 800 350 400 24 3 1000 1 0 0 1 4 23 3 4 5 2 5 v gs =10v, i d =5a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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